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Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure | 2019 | Global News | MITSUBISHI ELECTRIC UNITED STATES
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Materials | Free Full-Text | 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
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Unit-cell clamped trench VDMOS. The deep p + shields the trench gate... | Download Scientific Diagram
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Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
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Figure 1 from Enhanced shielded-gate trench MOSFETs for high-frequency, high-efficiency computing power supply applications | Semantic Scholar
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Schematic view of the planar and trench MOSFET cross-sections with the... | Download Scientific Diagram
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Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb
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